Abstract
Combined lateral-vertical oxidation of AlGaAs is investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after the epitaxial growth. It is shown that this technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Experimental results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors.
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