Abstract
Effects of post-deposition annealing on the structural, surface and optical properties of InAlN films have been investigated in this paper. InAlN films were grown on ZnO buffer layers on GaAs (100) substrates by magnetron co-sputtering of In and Al targets in Ar–N2 plasma at 100°C. The as-grown films were annealed at 250°C, 500°C and 700°C for six hours in a quartz tube furnace. X-ray diffraction (XRD) analysis confirmed the formation of InAlN films with preferred orientation along (101¯1) plane. Crystallinity of the films was improved with increase of the annealing temperature. A substantial increase in the crystallinity of InAlN film along (101¯1) plane was noticed at 700°C. Compositional analyses from the XRD and energy dispersive X-ray spectroscopy (EDS) specified higher In contents in the films as compared to the Al. Surface morphology of the films indicated grains growth whereas changes in the surface roughness, calculated using WSxM 5.0 develop 7.0 Nanotech Software, were found to be inconsistent with increase of the annealing temperature. Raman spectroscopy revealed A1 (LO) and E2 (high) phonon modes in the film annealed at 700°C. Photoluminescence spectra of InAlN films were also recorded to determine the band gap.
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