Abstract
ZnO films were grown on Al2O3 (1000) substrates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughness of the ZnO films grown on ZnO buffer layers annealed in a vacuum was decreased, indicative of an improvement in the ZnO surfaces. X-ray diffraction patterns showed that the crystallinity of the ZnO thin films was enhanced by using the annealed ZnO buffer layer in comparison with the film grown on without a buffer layer. The improvement of the surface and structural properties of the ZnO films might be attributed to the formation of the Zn-face ZnO buffers due to annealing in a vacuum. These results indicate that the surface and structural properties of ZnO films grown on Al2O3 substrates are improved by using ZnO buffer layers annealed in a vacuum.
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