Abstract
In this study, polymer light-emitting diodes (PLEDs) with a 2,3-dibutoxy-1,4-poly(phenylene vinylene) (DBPPV) emissive layer were fabricated. After the PLEDs were fabricated, they were postdeposition annealed (post-annealed) at various temperatures, 90, 120, 180, and 210 °C. It was clear that the anomalous current–voltage phenomenon existed at the annealing temperature below 120 °C. The anomalous current–voltage phenomenon was eliminated by post-annealing at temperature of 120 °C and higher. As shown in the electroluminescent (EL) spectra, redshift behavior was found which was attributable to post-annealing effect on the PLEDs. From the measurement of atomic force microscopic (AFM) images, annealing increased the average roughness of DBPPV films. The refractive indexes of DBPPV films also increased because of thermal annealing. That is, thermal annealing increased the number of interchain interactions of DBPPV films. This result caused the redshift behavior of PLED's EL spectrum.
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