Abstract
Electrical and optical properties of solid state incandescent light emitting devices made from MOS capacitors of the same Zr-doped HfO2 high-k film but two different post deposition annealing atmospheres have been investigated. Compared with the N2 annealed sample, the O2 annealed capacitor has a thicker and more SiOx-rich interface layer, lower defect densities, a larger dielectric breakdown strength, and a lower leakage current. Light emitted from the solid-state incandescent light emitting device made from the O2 annealed capacitor has a high intensity and slightly more blue component than that made from the N2 annealed capacitor due to the higher temperature of the conductive path. The former contains more Si and O elements in conductive paths than the latter does, which can be used to explain the difference in their electrical and optical characteristics. The post deposition atmosphere affected the original high-k stack's material and physical properties, which influences the formation and material composition of conductive paths and eventually the light emission characteristics.
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