Abstract
Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V versus Ag/AgCl, which was in a more noble region compared with the equilibrium potential of zinc. The average thickness of the zinc telluride thin films was approximately 3 μm, and the average growth rate was approximately 3 nm s−1. The as-deposited zinc telluride thin films had an amorphous phase with a black tint. By contrast, the zinc telluride thin films annealed at 683 K had a crystalline phase with a reddish-brown tint. The electrodeposited single-phase zinc telluride exhibited an optical absorption performance in a wavelength region that was shorter than 559 nm. At the annealing temperature of 683 K, the zinc telluride films exhibited an energy band gap of 2.3 eV, which was almost identical to that of single-crystal zinc telluride. The resistivity of the as-deposited amorphous-like zinc telluride thin films was approximately 2 × 105 Ω·m, whereas that of the samples annealed at 683 K was around 2 × 103 Ω·m, which was smaller than that of single-crystal zinc telluride. A three-dimensional nanostructure constructed with the zinc telluride nanowire array was also demonstrated using a template synthesis technique.
Highlights
Zinc-based semiconductor crystals have received considerable attention because the energy band gap level is suitable for developing a novel optical material
Mahalingam et al reported that zinc telluride (ZnTe) thin films can be prepared by using a potentiostatic electrodeposition technique from a simple sulfuric acid bath [15]. They found that the band gap of as-deposited ZnTe thin films was approximately 1.9 eV, while samples annealed at 623 K for 1 h exhibited 2.25 eV, which was in good agreement with the optical bandgap values of single-crystal ZnTe
They discovered that the band gap of as-deposited ZnTe thin films was 2.1–2.3 eV, and the resistivity was greater than 107 Ω·m, while samples annealed at 623 K for 15 min showed p-type conductivity
Summary
Zinc-based semiconductor crystals (zinc oxide, zinc sulfide, zinc selenide, etc.) have received considerable attention because the energy band gap level is suitable for developing a novel optical material. Kashyout et al reported the electrodeposition of zinc telluride (ZnTe) thin films on FTO substrates from an acid chloride bath [12] They revealed that the band gap and sheet resistance of the post-annealed samples increased by up to 2.31 eV and 815 kΩ/sq., respectively, by increasing the annealing temperature from 623 K to 672 K. Skhouni et al reported that ZnTe thin films could be electrodeposited on FTO substrates from an acid chloride bath [20] They revealed that the band gap of as-deposited ZnTe thin films was approximately 2.19 eV, whereas samples annealed at 623 K for 20 min exhibited a smaller band gap value. A zinc telluride nanowire structure was demonstrated using a template synthesis technique to confirm the uniform electrodeposition from the citric acid bath
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