Abstract
Zinc telluride (ZnTe) thin films were fabricated by using closed space sublimation (CSS) technique on glass substrate under vacuum. Pre-fabricated ZnTe thin films were doped with silver (Ag) by ion exchange method. X-ray diffraction showed the preferred orientation (111) of ZnTe thin film with polycrystalline behavior. Scanning electron microscope images were taken to estimate the grain boundaries; energy dispersive X-ray results confirmed the Ag composition in doped-ZnTe samples. Electrical measurements were performed to determine the resistivity, mobility and carrier concentrations of un-doped thin films and Ag-doped samples. The electrical resistivity was of the order of 106Ω-cm before doping. Ag-doped ZnTe samples exhibits low resistivity of the order of 103Ω-cm along with a change in the carrier concentrations and mobility as well at room temperature. The angle resolved optical transmission data, taken by spectrophotometer, was used to find the optical properties before and after Ag doping. Energy band gap showed decreasing trend with increasing Ag doping time.
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