Abstract
A new concept in one-dimensional electron-gas (1DEG) systems is proposed by introducing periodic bending of the heterointerface of an n-AlGaAs/u-GaAs modulation-doped structure. The carrier densities and the electrostatic potential of this system are numerically analyzed based on the classical drift-diffusion model where the doping concentration ND of n-AlzG1−zAs is 1.0×1018 cm−3, the aluminum molar fraction z of AlzGa1−zAs is 0.3, the carrier density of p-type GaAs is 1.0×1014 cm−3, and the bending angle of the heterointerface is 90°. We found that electrons are more accumulated in convex regions of the u-GaAs layer than in concave ones, and the electron density in a convex region is about twice that in the conventional two-dimensional electron-gas structure. We can treat this high density of electrons as a 1DEG channel for field-electron transistors (FETs) when the period of the bending interface is about 850 Å.
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