Analysis of Optical Properties of GaN/AlGaN Quantum Well Ultra-Violet Laser Diode Using 6X6 Hamiltonian

Abstract

The Quantum well structures have exhibited significant utility in the fabrication of advanced laser devices. The Gallium nitride semiconductor and its alloy particularly AlGaN based quantum structures are having important applications in optical data storage systems and the visible displays. Due to tailoring of wide band gap energy the spectrum obtained is from visible to ultraviolet wavelength range. We had thoroughly investigated the influence of Aluminum mole fraction variation in AlxGa1-xN under a biased condition for GaN/AlGaN based quantum heterostructure optical properties. Here, we had used 6X6 Hamiltonian to realize these properties. The 6X6 Hamiltonian has been chosen to include the many body effect in the calculation and to enhance the accuracy of the optimized results. The paper is focused to reveal the Aluminum mole fraction dependence of near and far filed intensities, peak optical gain, carrier concentration, and optical confinement factor. The effective index method has been used in determination of the optical field intensity in the near and far regimes. The variation in Aluminum mole fraction produces disparity in carrier concentration; hence, we have obtained the spontaneous emission and optical gain as a function of photon energy for different carrier density. The piezoelectric effect on GaN quantum well due to AlGaN barriers has been included through Poisson equation. This Poisson equation has been solved in a self-consistent manner along with Schrödinger and subsequently carrier concentrations have been deduced with a high accuracy using our simulation tools developed in MATLAB.