Abstract
We grow BaSi2 epitaxial films on Si(111) substrates by molecular beam epitaxy, and investigate their optical properties such as optical absorption coefficients, minority-carrier diffusion length, and minority-carrier lifetime. These are key parameters which determine the solar cell performance. The band gap of BaSi2 is measured to be approximately 1.3 eV. The absorption coefficient reaches approximately 3×104 cm−1 at 1.5 eV. The minority-carrier diffusion length and minority-carrier lifetime are found to be about 10 μm and 8 μs, respectively. These values are sufficiently large for thin-film solar cell applications. Internal photoresponse spectra are deduced from data obtained experimentally.
Published Version
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