Possibility of dc drift reduction of Ti:LiNbO3 modulators via dry O2 annealing process

Abstract

The possibility of the dc drift reduction of Ti:LiNbO3 optical modulators via the dry O2 annealing process of the wafer is investigated. In such modulators, the hydrogen impurities are reduced compared against those in the wet O2 annealed ones which exhibit large dc drifts. The dc drifts are observed to be less than 3 V for the dc bias application of 5 V at 80 °C through 60 h, but the dc drift in the second measurement of the same modulator is found to 5 V. After the bias application, the migration of H+ ions are observed in the Ti:LiNbO3.