Possibilities of the use of ion-beam methods for the diagnostics of planar nanostructures

Abstract

The possibilities of the nondestructive ion-beam diagnostics of planar nanostructures by the Rutherford backscattering (RBS) of H+ and He+ ion beams with energies of 0.9–1.6 MeV is briefly reviewed. The results of the ion-beam testing of Ba1−x Sr x TiO3 deposited onto Si (100), MgO (100), and NdGaO3 (100) single-crystal substrates are discussed. The degree of element inhomogeneity over the thickness of the coatings under study and the level of the diffuse contamination of the films by substrate atoms are determined by means of RBS measurements.