Year-end Sale % OFF 
Abstract
Diamond is a crystal with extremely strong atomic bonds. It is characterised by very low equilibrium parameters of the solubility and diffusion coefficients of impurities. Ion implantation therefore represents a natural alternative doping method. The published experimental results show that p-type and p+-type layers can be formed by boron ion implantation. Implantation of Li+ and C+ produces n-type layers. Diamond films grown in the presence of phosphorus and sodium can also be electrically conducting. The efficiency of this method of introducing electrically active centres varies strongly with the temperature of diamond during implantation and with the conditions during the subsequent annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
