Abstract
The creation of specific luminescent centers in semiconductors, in particular the controlled creation of nitrogen–vacancy (NV) centers in diamond, relies heavily on ion implantation. Furthermore, the formation of vacancies and the creation of various photonic devices for the manipulation and transportation of the photons emitted by these centers rely on the bond breakage that accompanies ion implantation. In this chapter, we review the physics related to the slowing down of ions in diamond, stressing its implications for implantation doping, the controlled introduction of vacancies and the creation of sacrificial graphitic regions in diamond.
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