Abstract
Variable energy positron beam and conventional positron lifetime spectroscopy were used to study pure copper exposed to irradiation with 167 MeV Xe26+ heavy ions with different doses of 1012, 1013, 5 × 1013, 1014 ions/cm2. The presence of vacancy-type defects induced by implantation was confirmed in Doppler spectroscopy characteristics. Decreasing of the positron diffusion length from 135 nm for unirradiated sample, to 82 nm for the lowest and to 46 nm for the highest applied dose was noted. It points out increasing defect concentration with the increase of the fluence. Additionally, the existence of one kind of defects in all irradiated samples was noticed. The defected zone covered with the implanted range and the so called “long range effect” was not confirmed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
