Abstract
The defect density profile of high‐efficiency epitaxial metalorganic chemical vapor deposition (MOCVD) grown GaAs heterojunction solar cell structures has been characterized using a variable‐energy positron beam. Spatial defect changes, film thickness variations, and possibly interfacial space charge and disorder may be resolved from annihilation characteristics by control of the implantation depth of positrons. Correlations were made relating positron annihilation spectroscopy (PAS) measurements to surface photovoltage data, band bending, and known MOCVD growth parameter variations. Based upon these correlations, it is expected that PAS may provide a valuable means for probing defect profiles that may affect the electrical and optical response of MOCVD‐grown semiconductor materials.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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