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Abstract
AbstractThe valence electron and positron charge densities in InAs and InSb are obtained from wave functions derived in a model pseudopotential band‐structure calculation. It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron‐positron momentum densities are calculated for the (001–110) plane. The results are used to analyze the positron effect in narrow‐gap semiconductors.
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