Positively charged magnetoexciton transitions in a p-doped GaAs/Al0.45Ga0.55As single heterojunction

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We report a photoluminescence-detected positively charged exciton (X+) transition from a p-doped GaAs single heterojunction in magnetic fields to 60 T. As the field increased above the quantum limit (10.8 T), the free carrier transition smoothly changes into a neutral exciton (X0) and positively charged exciton (X+) transitions. In comparison to its initial value ∼12 T, the binding energy of the X+ transition is doubled at 58 T. The variation of the X+ binding energy in magnetic fields has B dependency due to an increasing Coulomb interaction within the excitonic complex.