Abstract
Enhancement was observed in the grain size, the growth rate and the (100) grain orientation of diamond films on Si (100) when a positive bias of 100–200 V was applied to the substrates during the microwave plasma chemical vapor deposition (MPCVD) of diamond films. The positive bias was found to be effective also for the growth of B-doped diamond films of good electrical properties. The hole Hall mobility of a diamond film grown with zero bias was around 100 cm 2/V s while that of a sample with 200 V positive biasing reached 1000 cm 2/V s. This mobility value belongs to the highest ever reported for diamond films on Si. The main effects of the positive bias during the MPCVD diamond growth were concluded to be a suppression of ion impinging into the substrate and an increased electron collision which would enhance the radical formation on the growing diamond films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
