Positive tone oxide nanoparticle EUV (ONE) photoresists

Abstract

ABSTRACT Nanoparticles with a variety of organic/inorganic combinations have been investigated and the negative tone patterning was demonstrated using EUV radiation. Zirconium methacrylate (ZrMAA) nanoparticles had sensitivity with EUVexpos ure as high as 4.2 mJ/cm 2 with a resolution up to 22 nm, and an LER of 5.6 nm. Meanwhile, the dual-tone behavior of ZrMAA photoresists using e-beam and deep UV exposures is another attractive feature of the nanoparticlephotoresists, which may be further applied with EUV lithography. The current study investigates the positive tone patterning of ZrMAA and the process-dependent image reversal. Our proposed patterning mechanism is furtherillustrated and optimized based in a positive tone behavior study .Keywords: nanoparticle photoresist, positive-tone patterning, dual-tone, Ebeam, lithography 1. INTRODUCTION As required by advanced IC manufacturing, ever smaller feature size is required to accommodate more transistors per silicon die[1] [2]. Extreme ultraviolet lithography (EUVL) is one of the candidates for next generationlithography as an extendible technology, which promises to resolve sub-10 nm half-pitch (hp) features and thus follow the roadmap of Moore’s Law[3] [4]. As a rapidly evolving emerging technology, technical challenges are under activ eresearch include a reliable power source, EUVL resist, defect free mask and qualified illuminator optics[5]. Newphotoresist materials are one of the key drivers for further size shrinkage, which will be developed to support simultaneous optimization in sensitivity, resolution and line edge roughness at a short wavelength (13.5 nm ).Hybrid metal-oxide nanoparticles are among the most competitive candidates due to its high etch resistance,good compatibility with photoacid generator (PAG) a nd amorphous phase nature[6]. Methacrylate bound ZrO