Abstract
The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiOx during subsequent heat treatments at 800–1100°C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge Qi at the heterointerface to ~1.5 × 1012 cm–2 in contrast to the negative charge at the SiOx/Al2O3 ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer, Qi decreases by more than an order of magnitude to 5 × 1010 cm–2 with an increase in the SiO2 thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.
Published Version
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