Abstract
PBTI degradation on FinFETs with HfO2/TiN gate stack (EOT<1nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defects in the top-wall high-κ oxide than in the sidewall of the fin. This could explain more severe PBTI degradation.
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