Abstract
The termination structure for the pulsed power switch SiC RSD (reversely switched dynistor) is studied in this paper. According to the structure characteristics of SiC RSD, the positive-bevel edge termination is designed. By establishing the two-dimensional numerical model, the function that the positive-bevel can reduce the surface electric field is proved. Combined the surface electric field and the area loss, 45° positive angle is selected. According to the process characteristics of SiC material, bevel dicing together with ICP (inductively coupled plasma) etching treatment is chosen to fabricate the positive-bevel edge termination in experiment. The forward blocking voltage of about 600V is acquired for the device. The optimal value for the etching depth is also discussed.
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