Position-controlled remote epitaxy of ZnO for mass-transfer of as-deployed semiconductor microarrays

Dae Kwon Jin,Joonghoon Choi,Qingxiao Wang,Bong Kyun Kang,Junseok Jeong,Woo Seok Yang,Moon J Kim,Young Joon Hong

doi:10.1063/5.0047548

Abstract

We report the site-selective remote epitaxial growth of mechanically transferable ZnO microrod (MR) and microdisk (MD) arrays via hydrothermal growth. To designate the growth sites, a hole-patterned poly(methyl methacrylate) mask layer is formed on the graphene-coated GaN substrate. ZnO microarrays are exclusively grown to be either MR or MD on graphene-exposed patterned areas via the remote epitaxy. The remote heteroepitaxial relation between ZnO and GaN across graphene is observed by atomic resolution scanning transmission electron microscopy. The non-covalent remote epitaxial interface allows the mechanical lift-off of the ZnO microarrays and mass-transfer onto a surface of interest using a sticky tape as those arrays are well maintained. The donor substrate is refurbished for repetitive position-controlled remote epitaxy. This study provides a simple method of fabricating mass-transferable microarrays of semiconductors that can maintain the addressable spatial arrays of semiconductors to an arbitrary receiver substrate for ease of heterogeneous integration without an additional assembly process for position control.

Highlights

To fabricate the flexible devices, the film/wafer structures were delaminated by sacrificing the interface through etching or laser-assisted melting methods, and the delaminated film was mechanically diced for the following assembly and integration on the flexible templates
The PI-encapsulated film of ZnO microarrays was delaminated from the original substrate via the thermal release tape-assisted peeling-off technique and transferred onto a polyethylene terephthalate (PET)
We have demonstrated the position-controlled remote epitaxy of ZnO microarrays based on the remote epitaxy selectivity on graphene and PMMA

Summary

INTRODUCTION

Present electronic circuits are typically manufactured in the form of chips in which a large number of electronic components are isolatedly operated by addressing the column and row of a component in a matrix deployment. For the addressable deployment of the devices, top-down patterning of photolithography and etching has been carried out on the “film grown on wafer” structure for high yield and mass productivity. Despite the successful demonstration of the to-date monolithic circuits with billions of transistors integrated on a thumbnail-size chip, the approach of conventional top-down patterning fabrication of semiconductors has a drawback in fabricating the up-coming flexible and transferable electronics because of fragility and strong covalent bonds of the film/wafer structure. To fabricate the flexible devices, the film/wafer structures were delaminated by sacrificing the interface through etching or laser-assisted melting methods, and the delaminated film was mechanically diced for the following assembly and integration on the flexible templates. Despite the successful demonstration of the deformable devices, the method must face a technological difficulty in device miniaturization and assembly of the tiny, diced components. a new technological platform for flexible and transferable device fabrication is necessary from the epitaxy technique.. Despite the successful demonstration of the to-date monolithic circuits with billions of transistors integrated on a thumbnail-size chip, the approach of conventional top-down patterning fabrication of semiconductors has a drawback in fabricating the up-coming flexible and transferable electronics because of fragility and strong covalent bonds of the film/wafer structure.. To fabricate the flexible devices, the film/wafer structures were delaminated by sacrificing the interface through etching or laser-assisted melting methods, and the delaminated film was mechanically diced for the following assembly and integration on the flexible templates.. This article reports the position-controlled remote epitaxy of ZnO microrod (MR) and microdisk (MD) arrays via hydrothermal growth on the polymer-mask patterned graphene/GaN substrate. Owing to the weakly bound interface of the graphene/GaN substrate, the mass-release of ZnO microarrays and transfer onto a flexible, transparent polymeric substrate of interest are achieved by the sticky tape-assisted stamp-transfer technique

EXPERIMENTAL

RESULTS AND DISCUSSION

CONCLUSION