Position dependences in planar magnetron sputtering of TiN films

Abstract

Intrinsic stress and resistivity of reactively sputtered TiN films were investigated as functions of the substrate position in front of a planar magnetron with a circular target. The substrate positions (central and various off-axis positions) were calculated on the basis of a model for the transport of sputtered particles, in which the deposition rate is dependent of substrate position and the mean particle incidence is perpendicular. A more or less pronounced position dependence was observed as a function of the discharge power, the argon pressure, the nitrogen content in the working gas and the bias voltage. The results are interpreted in terms of position dependences of oblique deposition incidence and of energetic particle bombardment. The oblique deposition incidence caused by the shape of the sputtering source was calculated by using a defined angular distribution of particle incidence. The energetic particle bombardment was analysed by heating flux measurements.