Influence of angular distribution of particle incidence on properties of sputtered TiN films

Abstract

Using a planar magnetron with a circular target, titanium nitride films were reactively sputtered under the usual conditions of particle incidence (full angular width) and under conditions of limited angular width of particle incidence (achieved by an additional shield). The corresponding angular distributions of particle incidence have been evaluated using the geometry of the sputtering source as well as the substrate position and orientation. The dependences of the intrinsic stress and resistivity of deposited films on the nitrogen content of the sputtering atmosphere, bias voltage and tilt angle of the substrate at argon pressures of 0.10 Pa and 0.85 Pa have been investigated. Films deposited under limited angular width exhibit higher compressive intrinsic stresses than those deposited under full angular width under otherwise constant conditions. The range of tilt angle of the substrate, in which films with compressive intrinsic stresses are deposited, is larger under conditions of limited angular width of particle incidence. The results support the relevance of the angle of particle incidence to the formation of film properties.