Abstract
Unlike the slow band (S-band), there is currently no clear spectroscopic signature which links the fast band (F-band) to the Si nanostructure. Time resolved photoluminescence (TRPL) was employed in the present work to study the porous silicon photoluminescence decay behavior in the nanosecond range, namely the F-band. Measurements were performed at room temperature on oxidized and fresh porous silicon samples. It was shown that the fast (ns) component had an extrinsic origin for oxidized samples, while the fresh samples exhibited an intrinsic behavior for both the fast and slow (10 μs) components. The excitation intensity dependence of the PL intensity was studied and showed different behavior of the F-band in both oxidized and fresh samples.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
