Abstract
AbstractElectron spin resonance (ESR) study of annealed porous Si (PS) samples shows the existence of 20% to 30% of oxygen related Pbl (.Si-Si2O) centers, in addition to the Pb0 (·Si-Si3) centers already reported by other groups. The 29Si hyperfine and superhyperfine lines are well-defined at room temperature. We find that the nanostructure of PS, although twisted as appeared in scanning electron microscopy images, is well aligned with the underlying crystal lattice, and the ESR line broadening is mainly due to the local strain around the dangling bonds and not to the nanoscale column or particle misalignment.
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