Abstract
Bragg reflectors consisting of the sequence of dielectric layers are considered to create p-n junction solar cells (SC) with improved efficiency in the longwave spectral range. Bragg mirrors (BM) based on porous silicon (PS) mutilayers at the backside of single crystalline and multicrystalline silicon wafer were formed by electrochemically etching. Maximal experimental reflectivity for BM on multicrystalline substrate achieves 62% due to the natural crystallites disorientation of multicrystalline substrate, whereas for single crystalline silicon the reflectivity in maximum is 87%. BM was formed also on rear side of multicrystalline silicon wafer with p-n junction.
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