Abstract
Highly-pure iron powder was covered on porous silicon for fabricating semiconducting β-FeSi2 structures. X-ray diffraction and Raman scattering results confirm the formation of pure-phase β-FeSi2 after high-temperature annealing at 1100°C and then long-time persistence at 900°C. Scanning electron microscope observations reveal that large-size (>μm) β-FeSi2 grains mainly form in the pores of porous silicon and some nanocrystals grow on local surfaces. The temperature-dependent photoluminescence spectra disclose that the observed ∼1.54 μm emission arises from free exciton recombination, which is confirmed via the activation energy (0.25 eV) measurement. Our method provides a way to synthesize single-phase β-FeSi2 materials.
Published Version
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