Abstract
Sol-gel process of porous PbZr0.48Ti0.52O3 film preparation on Pt/TiO2/SiO2/Si substrates is studied. Polyvinylpyrrolidone (PVP) with molecular weight of 29000 is used as a porogen agent destroyed after annealing. The volume film porosity reaches ˜33 % at 20 wt.% PVP content that permits twice to increase the film thickness without cracking. Dielectric constant decreases with the increase of the PVP content, whereas the remanent polarization changes very slightly, however polarization hysteresis loops in porous films have bad saturation due to domain pinning. An increase of the film thickness leads to remanent polarization and dielectric constant increasing.
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