Abstract
In this work H 2 plasma curing is studied to appreciate hydrogen species impact on porogen removal efficiency and transformation occurring within the porous SiOCH structure. The investigation is done by comparing H 2 plasma with other curing treatment (UV curing). H 2 plasma curing shows a benefit in term of porogen removal and can be considered as a fast process as only few minutes are required to decompose the C–H bonds and create the porosity. However, longer treatment reveals carbon depletion by Si–CH 3 decrease and porosity collapse through the shrinkage enhancement. Plasma treatments lead also to the creation of SiH bonds which could serve as a hydrogen radical generator when the film is electrically stressed. The leakage current and breakdown voltage values are then affected by these hydrogen radicals, which can contribute in the electrical conduction. The H 2 process allows obtaining films with a dielectric constant below 2.4. This process shows encouraging results comparing with the k = 2.35 obtained with UV curing technology.
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