Abstract
Polycrystalline silicon (poly-Si) thin film transistors (TFT's) have been fabricated by ion beam sputtering (IBS) and XeCl excimer laser annealing (ELA) at 100°C. The amorphous silicon (a-Si) films to be crystallized into poly-Si were deposited by IBS and they had very low argon content (less than 1 at. %). No explosive gas evolution was observed during the instantaneous crystallization of the a-Si film by ELA, while the a-Si film deposited by conventional RF/DC magnetron sputtering or PECVD underwent severe silicon film ablation due to the explosive argon or hydrogen evolution during ELA. The poly-Si TFT fabricated by IBS and ELA exhibited an ON/OFF current ratio of 4 × 104. The measured sheet resistance of the n+-doped source/drain resistance was less than 700 Ω/sq. and the output ID-VDS curves showed that good ohmic contacts were formed
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