Abstract
Abstract We fabricated a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) by new excimer laser annealing (ELA) method employing floating active structure. The new simple ELA method produces large lateral grains exceeding 4 μm. A novel poly-Si TFT that exhibits very high mobility (μFE=331 cm2/V s) and low leakage current has been successfully fabricated by single laser irradiation on selectively floating a-Si layer. Uniform lateral grains have been obtained with wide ELA process window.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
