Abstract
The development of a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) technology which is compatible with plastic substrates is critical to the realisation of active matrix flat-panel displays that are flexible, lightweight, low cost and rugged. In this paper, we present performance comparisons of self-aligned aluminium top-gate poly-Si TFTs fabricated using a maximum substrate temperature of 150/spl deg/C using excimer laser annealing. The best devices have effective carrier mobilities >90 cm/Vs, threshold voltage 35 V. These are the highest performance poly-Si TFTs reported to date for use with polyester substrates.
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