Abstract
In this paper, we report the poly-silicon planarization with the introduction of the matrix-temperature controller, named as Hydra, which is equipped in one commercial inductive coupled plasma (ICP) etch tool. The 3sigma of poly-silicon thickness within improved more than 60% and the uniformity is very close to current planar technology node. The temperature dependence is 29.0A/℃. The planarization results show better performance than gas cluster ion beam (GCIB) method as reported. For more common use, an advanced process control is also proposed to overcome the difference of incoming after CMP process. The CMP process always shows a major radical thickness map, which can be compensated by tuning radical etch rate map by changing process parameters. The Hydra based etch planarization technology can also be extend to other process as ILD etch back with suitable etch process. This technology will be very power in the future 3D transistors for planarization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
