Abstract
The approximation of MOSFET nonlinearities by use of polynomial splines was investigated for reducing both circuit model development time and model simulation cost. After a brief tutorial on spline functions, it is shown how the number of independent variables for the MOSFET simulation models in digital circuits is reduced by their use. A tableau formulation for generating splines is presented along with a storage-reduction technique for polynomial spline coefficients. Mathematical programming problems for one-, two-, and three-dimensional splines are given that result in accurate monotonic splines using few segments. Two spline segments are shown to provide sufficient accuracy in the one-dimensional case, while 4*4 and 2*5*5 segments provide sufficient accuracy in the two- and three-dimensional cases, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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