Abstract
The realization of next-generation transition-metal dichalcogenide based nanoscale devices demands stringent control over coherent in-plane heterostructures of atomically thin monolayers with exceptional properties. In this paper, we report atmospheric-pressure chemical vapor deposition growth of large-domain, coherent polymorphic in-plane heterostructures of monolayer WS2 on a SiO2/Si substrate with intriguing optical and electronic properties. The formation of in-plane heterostructures with 1H and 1T polymorphs was extensively analyzed using a variety of spectroscopic as well as microscopic techniques, along with lifetime luminescence imaging. High-angle annular dark-field scanning transmission electron microscopy revealed coexistence of the heterophases in monolayer WS2 heterostructures. Back-gated photoconductivity measurements in nanoscale field-effect-transistor device geometry and the rational design of a WS2 heterostructure pattern demonstrate optoelectronic applications.
Published Version
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