Abstract
In this work, amorphous Mn-doped gallium oxide (a-GMO) films are prepared by polymer-assisted deposition. The a-GMO films exhibit room-temperature ferromagnetism (RTFM) and their saturation magnetization (MS) and coercive field (HC) values are dependent on the Mn concentration. Interestingly, a lower Mn-doping concentration (3.1%) is sufficient to trigger the RTFM in the a-GMO films, in comparison with the previously-reported values in crystalline Mn-doped β-Ga2O3 (11%) and γ-Ga2O3 (7.0%). Furthermore, the a-GMO films exhibit higher MS values than those crystalline Mn-doped Ga2O3 films at the medium doping levels between 10% and 20%. Further analysis shows that the enhancement of the ferromagnetism comes from the strong coupling between abundant oxygen vacancies (VOs) and Mn ions in the a-GMO films. Our results give insight to the RTFM of the a-GMO films and may be useful for the design, fabrication and application of spintronic materials based on gallium oxide.
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