Abstract
Optoelectronic bionic synapses, integrating sensing and processing capabilities, help to break through the limitations of von Neumann structure and are promising in smart sensors, AI robots etc. fields. Here, we fabricated a deep ultraviolet (DUV) optoelectronic bionic synapse with an amorphous gallium oxide (a-GaOx) film deposited by metal–organic chemical vapor deposition (MOCVD). DUV illumination pulses could be facilely written into the bionic synapse, and the written information exhibits non-volatility. By manipulating the illumination pulse number, the pulse width, and the pulse power density, the synapse is capable of transitioning from short-term memory (STM) to long-term memory (LTM), effectively emulating the learning-memory behavior of human brains.
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