Abstract

Light-emitting diodes (LEDs) of poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were fabricated using sodium sulfonated polystyrene (SSPS) ionomer containing 10 mol% ionic groups as an electron injecting and hole blocking material. When a device was structured as ITO/MEH-PPV/SSPS/Al, the operating voltage was reduced by ∼60 % and the relative quantum efficiency was thousand-fold enhanced compared with the corresponding single-layer MEH-PPV device

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