Abstract
AbstractAdmittance spectroscopy is employed to explain the property differences observe between organic thin film transistors (OTFTs) fabricated with various gate insulator layers based on poly(4‐vinylphenol) (PVP) and poly(methyl methacrylate) (PMMA). The objective is achieved through the development of an equivalent circuit and a compact analytical model of the device core structure, namely, the metal–insulator–semiconductor (MIS) capacitor. The model fitting with experimental data allows to extract a wide range of parameters and, in particular, demonstrates the critical role played by the interface between insulator and semiconductor layers.
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