Abstract
It is found that a spurious leakage path from the emitter to the collector of a lateral p-n-p or a trench-defined n-p-n device may be induced by the applied collector voltage. This voltage influences the surface potential at the emitter-base junction through the charging of the polyimide used as interlevel dielectric or as trench fill, respectively. A simple model of the effect is developed, and several successful process features are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
