Abstract

AbstractNowadays, polyimide (PI) with low dielectric constant is expected to be widely applied in microelectronics. For this reason, hollow glass microspheres (HGM) modified by silane coupling agent KH‐550 (K‐HGM), a series of HGM/PI and K‐HGM/PI composite films with excellent thermal performance, hydrophobic and low dielectric constant were fabricated by in situ polymerization. The effect of HGM/K‐HGM content on the properties of composite films was studied. The superior heat resistance of HGM can improve the thermal performance of composite films. Due to silane coupling agent KH‐550, K‐HGM exhibits a good interfacial compatibility with PI matrix and forms an interfacial adhesion region. With the HGM loading of 6%, comparing with pure PI films, the glass transition temperatures (Tg) of composite films were dramatically increased by 32.3°C. Especially, the low dielectric constant of 2.21 and dielectric loss of 0.0059 at 1 MHz were obtained for the PI/K‐HGM composite film with addition of 8 wt%. Thus, PI/K‐HGM composite films show more excellent performance. The current work provides a promising solution for fabrication of PI with low dielectric constant and superior thermal performance that may be applied in microelectronics industry.

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