Abstract

In this work, we studied inverted organic solar cells based on bulk heterojunction using poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C71-butyric acid methyl ester (P3HT:PCBM) as an active layer and a novel cathode buffer bilayer consisting of tin dioxide (SnO2) combined with polyethylenimine-ethoxylated (PEIE) to overcome the limitations of the single cathode buffer layer. The combination of SnO2 with PEIE is a promising approach that improves the charge carrier collection and reduces the recombination. The efficient device, which is prepared with a cathode buffer bilayer of 20 nm SnO2 combined with 10 nm PEIE, achieved Jsc = 7.86 mA/cm2, Voc = 574 mV and PCE = 2.84%. The obtained results exceed the performances of reference solar cell using only a single cathode layer of either SnO2 or PEIE.

Highlights

  • Third-generation photovoltaic technology based on conjugated polymers has drawn much attention over the past decade due to advantages such as simple preparation, light weight, low cost, solution-based fabrication on large-area and low-temperature solution process ability that allows for fabrication on flexible substrates via roll-to-roll manufacturing for solar energy conversion [1,2,3,4]

  • We demonstrated an efficiency enhancement of inverted organic solar cells based

  • We demonstrated an efficiency enhancement of inverted organic solar cells based on heterojunction by combining aqueous solution processed PEIE and sputtered SnO2 as a cathode

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Summary

Introduction

Third-generation photovoltaic technology based on conjugated polymers has drawn much attention over the past decade due to advantages such as simple preparation, light weight, low cost, solution-based fabrication on large-area and low-temperature solution process ability that allows for fabrication on flexible substrates via roll-to-roll manufacturing for solar energy conversion [1,2,3,4]. Poly(3,4 ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) has an acidic and hydrophilic nature [16,17], which is detrimental to the active layer and can etch the ITO via the increase of the interfacial resistance through indium diffusion into the active layer; this leads to the deterioration of the device performance [18,19,20] To overcome these issues, the inverted configuration is the appropriate solution to make PEDOT:PSS-free device, where the polarity of charge collection is opposite to that in the conventional one. Courtright et al [36] studied separately PEIE and PEI as the ETL for PBDTT-FTTE:PC70BM-based iOPVs on top of zinc oxide They found that the incorporation of PEIE as a cathode buffer layer gave an enhancement of the cell performance with 7.37%. It has been found that with the combination of SnO2 and PEIE as a cathode buffer bilayer, the short circuit current density (Jsc) was obviously improved, resulting in better device performance with an efficiency reaching 2.84%, compared to reference devices with pure SnO2 and PEIE as a cathode buffer layer

Characterization Set-Up
SnO2 Thin Film Deposition
PEIE Interlayer Fabrication
Discussion
UV-Visible Study
UV-Visible
Hall Effect Study
XRD and GIXRD Study
J–V Characterization and EQE Measurements
Conclusion
Conclusions
Full Text
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