Polycrystalline pentacene thin films for large area electronic applications

Abstract

The growth of and the electronic transport in pentacene films on organic and inorganic dielectrics were studied. The morphology and structural properties of pentacene films are clearly correlated with the deposition parameters and substrate properties. To study the electronic properties we have formed inverted staggered transistors. The mobility in the transistors is correlated with the structural properties of the films and increases with crystal size. The TFTs exhibit typical mobilities of 0.4 cm 2/ V s and on/off ratios >10 8 on thermal oxide and smooth silicon nitride. The dielectric's influence on device performance will be discussed.