Abstract
This letter reports the fabrication of high performance polycrystalline InGaSnO (IGTO) thin-film transistors (TFTs) at a low temperature of 400 °C. The microstructure of IGTO films was analyzed using X-ray diffraction and high-resolution transmission electron microscopy. The fabricated polycrystalline IGTO TFTs exhibited an unexpected high mobility of 116.5 cm2/Vs, threshold voltage of 0.47 V, low subthreshold gate swing of 134 mV/decade, and ${I}_{ON/OFF}$ ratio of $> 1\times 10^{9}$ . Moreover, the stable behavior against external gate bias stress was observed for crystalline IGTO TFTs, which was attributed to the high degree of metal-oxygen lattice ordering.
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