Abstract
In this paper, titanium-doped zinc oxide (TZO) films were prepared by radio frequency (RF) sputtering at different RF powers acting as the channel layers of thin film transistors (TFTs). Through the analysis of scanning electron microscope (SEM), X-Ray diffraction (XRD) and transfer characteristics, we studied the effects of RF power on properties of TZO films and TZO-based TFTs and obtained optimum device characteristics at the RF power of 100W. The TZO-based TFT fabricated at the optimum RF power exhibits a high saturation mobility (μ sat ) of 213 cm2V−1S−1, a low subthreshold swing (SS) of 143 mV/decade and a high I on /I off ratio of 7.4×108.
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