Abstract
Planar metal–diamond–metal photoconductive devices have been fabricated from free standing large grain (20–30 μm) polycrystalline thin film diamond. An interdigitated electrode design with spacings of 20 μm was used to produce effective UV photodetecting devices at bias values in the range 0.1–10 V. A methane-air treatment has been used to modify the structures such that unprecedented performance characteristics have been recorded (106 higher response to 200 nm than visible wavelengths, <0.1 nA dark currents); spectral features similar to those observed in natural diamond crystals have been observed indicating that the treatment used led to near ideal electronic characteristics from polycrystalline material.
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