Abstract
AbstractPolyamic acids synthesized from di‐trifluoromethyl methane bis(phthalic anhydride) and 4,4′‐diaminophenyl sulfone and 4,4′‐diaminophenyl ether were found to have excellent negative E‐beam resist properties. The best materials contain about 90% imidized structural units having sensitivities of 1.5–2.5 μC cm−2 and contrast of 1.0–1.3. Polyamic acid of pyromellitic dianhydride and 4,4′‐diaminophenyl sulfone imidized to 97% exhibits useful positive E‐beam resist properties. Radiation induces imidization or chain scission to alter the solubility of the resist polymers resulting in the formation of latent images.
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